15 Description = QObject::tr (
"HICUM Level 2 v2.24 verilog device");
18 QObject::tr (
"GICCR constant")
19 +
" ("+QObject::tr (
"A^2s")+
")"));
21 QObject::tr (
"Zero-bias hole charge")
22 +
" ("+QObject::tr (
"Coul")+
")"));
24 QObject::tr (
"High-current correction for 2D and 3D effects")
25 +
" ("+QObject::tr (
"A")+
")"));
27 QObject::tr (
"Emitter minority charge weighting factor in HBTs")));
29 QObject::tr (
"Collector minority charge weighting factor in HBTs")));
31 QObject::tr (
"B-E depletion charge weighting factor in HBTs")));
33 QObject::tr (
"B-C depletion charge weighting factor in HBTs")));
35 QObject::tr (
"Internal B-E saturation current")
36 +
" ("+QObject::tr (
"A")+
")"));
38 QObject::tr (
"Internal B-E current ideality factor")));
40 QObject::tr (
"Internal B-E recombination saturation current")
41 +
" ("+QObject::tr (
"A")+
")"));
43 QObject::tr (
"Internal B-E recombination current ideality factor")));
45 QObject::tr (
"Peripheral B-E saturation current")
46 +
" ("+QObject::tr (
"A")+
")"));
48 QObject::tr (
"Peripheral B-E current ideality factor")));
50 QObject::tr (
"Peripheral B-E recombination saturation current")
51 +
" ("+QObject::tr (
"A")+
")"));
53 QObject::tr (
"Peripheral B-E recombination current ideality factor")));
55 QObject::tr (
"Non-ideality factor for III-V HBTs")));
57 QObject::tr (
"Base current recombination time constant at B-C barrier for high forward injection")
58 +
" ("+QObject::tr (
"s")+
")"));
60 QObject::tr (
"Internal B-C saturation current")
61 +
" ("+QObject::tr (
"A")+
")"));
63 QObject::tr (
"Internal B-C current ideality factor")));
65 QObject::tr (
"External B-C saturation current")
66 +
" ("+QObject::tr (
"A")+
")"));
68 QObject::tr (
"External B-C current ideality factor")));
70 QObject::tr (
"B-E tunneling saturation current")
71 +
" ("+QObject::tr (
"A")+
")"));
73 QObject::tr (
"Exponent factor for tunneling current")));
75 QObject::tr (
"Specifies the base node connection for the tunneling current")));
77 QObject::tr (
"Avalanche current factor")
78 +
" ("+QObject::tr (
"1/V")+
")"));
80 QObject::tr (
"Exponent factor for avalanche current")
81 +
" ("+QObject::tr (
"Coul")+
")"));
83 QObject::tr (
"Relative TC for FAVL")
84 +
" ("+QObject::tr (
"1/K")+
")"));
86 QObject::tr (
"Relative TC for QAVL")
87 +
" ("+QObject::tr (
"1/K")+
")"));
89 QObject::tr (
"Zero bias internal base resistance")
90 +
" ("+QObject::tr (
"Ohm")+
")"));
92 QObject::tr (
"External base series resistance")
93 +
" ("+QObject::tr (
"Ohm")+
")"));
95 QObject::tr (
"Factor for geometry dependence of emitter current crowding")));
97 QObject::tr (
"Correction factor for modulation by B-E and B-C space charge layer")));
99 QObject::tr (
"Ratio of HF shunt to total internal capacitance (lateral NQS effect)")));
101 QObject::tr (
"Ration of internal to total minority charge")));
103 QObject::tr (
"Emitter series resistance")
104 +
" ("+QObject::tr (
"Ohm")+
")"));
106 QObject::tr (
"External collector series resistance")
107 +
" ("+QObject::tr (
"Ohm")+
")"));
109 QObject::tr (
"Substrate transistor transfer saturation current")
110 +
" ("+QObject::tr (
"A")+
")"));
112 QObject::tr (
"Forward ideality factor of substrate transfer current")));
114 QObject::tr (
"C-S diode saturation current")
115 +
" ("+QObject::tr (
"A")+
")"));
117 QObject::tr (
"Ideality factor of C-S diode current")));
119 QObject::tr (
"Transit time for forward operation of substrate transistor")
120 +
" ("+QObject::tr (
"s")+
")"));
122 QObject::tr (
"Substrate series resistance")
123 +
" ("+QObject::tr (
"Ohm")+
")"));
125 QObject::tr (
"Substrate shunt capacitance")
126 +
" ("+QObject::tr (
"F")+
")"));
128 QObject::tr (
"Internal B-E zero-bias depletion capacitance")
129 +
" ("+QObject::tr (
"F")+
")"));
131 QObject::tr (
"Internal B-E built-in potential")
132 +
" ("+QObject::tr (
"V")+
")"));
134 QObject::tr (
"Internal B-E grading coefficient")));
136 QObject::tr (
"Ratio of maximum to zero-bias value of internal B-E capacitance")));
138 QObject::tr (
"Peripheral B-E zero-bias depletion capacitance")
139 +
" ("+QObject::tr (
"F")+
")"));
141 QObject::tr (
"Peripheral B-E built-in potential")
142 +
" ("+QObject::tr (
"V")+
")"));
144 QObject::tr (
"Peripheral B-E grading coefficient")));
146 QObject::tr (
"Ratio of maximum to zero-bias value of peripheral B-E capacitance")));
148 QObject::tr (
"Internal B-C zero-bias depletion capacitance")
149 +
" ("+QObject::tr (
"F")+
")"));
151 QObject::tr (
"Internal B-C built-in potential")
152 +
" ("+QObject::tr (
"V")+
")"));
154 QObject::tr (
"Internal B-C grading coefficient")));
156 QObject::tr (
"Internal B-C punch-through voltage")
157 +
" ("+QObject::tr (
"V")+
")"));
159 QObject::tr (
"External B-C zero-bias depletion capacitance")
160 +
" ("+QObject::tr (
"F")+
")"));
162 QObject::tr (
"External B-C built-in potential")
163 +
" ("+QObject::tr (
"V")+
")"));
165 QObject::tr (
"External B-C grading coefficient")));
167 QObject::tr (
"External B-C punch-through voltage")
168 +
" ("+QObject::tr (
"V")+
")"));
170 QObject::tr (
"Partitioning factor of parasitic B-C cap")));
172 QObject::tr (
"Partitioning factor of parasitic B-E cap")));
174 QObject::tr (
"C-S zero-bias depletion capacitance")
175 +
" ("+QObject::tr (
"F")+
")"));
177 QObject::tr (
"C-S built-in potential")
178 +
" ("+QObject::tr (
"V")+
")"));
180 QObject::tr (
"C-S grading coefficient")));
182 QObject::tr (
"C-S punch-through voltage")
183 +
" ("+QObject::tr (
"V")+
")"));
185 QObject::tr (
"Low current forward transit time at VBC=0V")
186 +
" ("+QObject::tr (
"s")+
")"));
188 QObject::tr (
"Time constant for base and B-C space charge layer width modulation")
189 +
" ("+QObject::tr (
"s")+
")"));
191 QObject::tr (
"Time constant for modelling carrier jam at low VCE")
192 +
" ("+QObject::tr (
"s")+
")"));
194 QObject::tr (
"Neutral emitter storage time")
195 +
" ("+QObject::tr (
"s")+
")"));
197 QObject::tr (
"Exponent factor for current dependence of neutral emitter storage time")));
199 QObject::tr (
"Saturation time constant at high current densities")
200 +
" ("+QObject::tr (
"s")+
")"));
202 QObject::tr (
"Smoothing factor for current dependence of base and collector transit time")));
204 QObject::tr (
"Partitioning factor for base and collector portion")));
206 QObject::tr (
"Internal collector resistance at low electric field")
207 +
" ("+QObject::tr (
"Ohm")+
")"));
209 QObject::tr (
"Voltage separating ohmic and saturation velocity regime")
210 +
" ("+QObject::tr (
"V")+
")"));
212 QObject::tr (
"Internal C-E saturation voltage")
213 +
" ("+QObject::tr (
"V")+
")"));
215 QObject::tr (
"Collector punch-through voltage")
216 +
" ("+QObject::tr (
"V")+
")"));
218 QObject::tr (
"Storage time for inverse operation")
219 +
" ("+QObject::tr (
"s")+
")"));
221 QObject::tr (
"Total parasitic B-E capacitance")
222 +
" ("+QObject::tr (
"F")+
")"));
224 QObject::tr (
"Total parasitic B-C capacitance")
225 +
" ("+QObject::tr (
"F")+
")"));
227 QObject::tr (
"Factor for additional delay time of minority charge")));
229 QObject::tr (
"Factor for additional delay time of transfer current")));
231 QObject::tr (
"Flag for turning on and off of vertical NQS effect")));
233 QObject::tr (
"Flicker noise coefficient")));
235 QObject::tr (
"Flicker noise exponent factor")));
237 QObject::tr (
"Flag for determining where to tag the flicker noise source")));
239 QObject::tr (
"Scaling factor for collector minority charge in direction of emitter width")));
241 QObject::tr (
"Scaling factor for collector minority charge in direction of emitter length")));
243 QObject::tr (
"Bandgap voltage extrapolated to 0 K")
244 +
" ("+QObject::tr (
"V")+
")"));
246 QObject::tr (
"First order relative TC of parameter T0")
247 +
" ("+QObject::tr (
"1/K")+
")"));
249 QObject::tr (
"Second order relative TC of parameter T0")));
251 QObject::tr (
"Temperature exponent for RCI0")));
253 QObject::tr (
"Relative TC of saturation drift velocity")
254 +
" ("+QObject::tr (
"1/K")+
")"));
256 QObject::tr (
"Relative TC of VCES")
257 +
" ("+QObject::tr (
"1/K")+
")"));
259 QObject::tr (
"Temperature exponent of internal base resistance")));
261 QObject::tr (
"Temperature exponent of external base resistance")));
263 QObject::tr (
"Temperature exponent of external collector resistance")));
265 QObject::tr (
"Temperature exponent of emitter resistance")));
267 QObject::tr (
"Temperature exponent of mobility in substrate transistor transit time")));
269 QObject::tr (
"Effective emitter bandgap voltage")
270 +
" ("+QObject::tr (
"V")+
")"));
272 QObject::tr (
"Effective collector bandgap voltage")
273 +
" ("+QObject::tr (
"V")+
")"));
275 QObject::tr (
"Effective substrate bandgap voltage")
276 +
" ("+QObject::tr (
"V")+
")"));
278 QObject::tr (
"Coefficient K1 in T-dependent band-gap equation")));
280 QObject::tr (
"Coefficient K2 in T-dependent band-gap equation")));
282 QObject::tr (
"Exponent coefficient in transfer current temperature dependence")));
284 QObject::tr (
"Exponent coefficient in B-E junction current temperature dependence")));
286 QObject::tr (
"Relative TC of forward current gain for V2.1 model")
287 +
" ("+QObject::tr (
"1/K")+
")"));
289 QObject::tr (
"Flag for turning on and off self-heating effect")));
291 QObject::tr (
"Thermal resistance")
292 +
" ("+QObject::tr (
"K/W")+
")"));
294 QObject::tr (
"Thermal capacitance")
295 +
" ("+QObject::tr (
"J/W")+
")"));
297 QObject::tr (
"Flag for compatibility with v2.1 model (0=v2.1)")));
299 QObject::tr (
"Temperature at which parameters are specified")
300 +
" ("+QObject::tr (
"C")+
")"));
302 QObject::tr (
"Temperature change w.r.t. chip temperature for particular transistor")
303 +
" ("+QObject::tr (
"K")+
")"));
305 QObject::tr (
"simulation temperature")));
310 Model =
"hicumL2V2p24";
317 p->
Props.getFirst()->Value =
Props.getFirst()->Value;
324 Name = QObject::tr(
"HICUM L2 v2.24");
325 BitmapFile = (
char *)
"npnsub_therm";
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